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STU95N2LH5 数据表(PDF) 5 Page - STMicroelectronics |
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STU95N2LH5 数据表(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics Doc ID 13834 Rev 5 5/17 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=12.5 V, ID= 40 A, RG= 4.7 Ω, VGS= 10 V Figure 17 - 7 38 - ns ns td(off) tf Turn-off delay time Fall time VDD=12.5 V, ID= 40 A, RG= 4.7 Ω, VGS= 10 V Figure 17 - 22 7 - ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD= 35 A, VGS=0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VDD= 20 V di/dt =100 A/µs, Figure 19 - 32.4 27.1 1.7 ns nC A |
类似零件编号 - STU95N2LH5 |
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类似说明 - STU95N2LH5 |
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