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STP3NK100Z 数据表(PDF) 5 Page - STMicroelectronics |
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STP3NK100Z 数据表(HTML) 5 Page - STMicroelectronics |
5 / 16 page STF3NK100Z - STP3NK100Z - STD3NK100Z Electrical characteristics 5/16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 500V, ID= 1.25A, RG=4.7Ω, VGS=10V (see Figure 16) 15 7.5 ns ns td(off) tr Turn-off delay time Fall time VDD= 500V, ID= 1.25A, RG=4.7Ω, VGS=10V (see Figure 16) 39 32 ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by package Source-drain current Source-drain current (pulsed) 2.5 10 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 2.5A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5A, di/dt = 100A/µs, VDD= 100V, Tj= 25°C (see Figure 21) 584 2.3 8 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5A, di/dt = 100A/µs, VDD= 100V, Tj=150°C (see Figure 21) 628 2.5 8.1 ns µC A Table 9. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO (1) 1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage of external components. Gate-source breakdown voltage IGS = ±1mA (open drain) 30 V |
类似零件编号 - STP3NK100Z |
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类似说明 - STP3NK100Z |
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