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STP3NK100Z 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP3NK100Z
功能描述  N-channel 1000V - 5.4廓 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP3NK100Z 数据表(HTML) 5 Page - STMicroelectronics

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STF3NK100Z - STP3NK100Z - STD3NK100Z
Electrical characteristics
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 500V, ID= 1.25A,
RG=4.7Ω, VGS=10V
(see Figure 16)
15
7.5
ns
ns
td(off)
tr
Turn-off delay time
Fall time
VDD= 500V, ID= 1.25A,
RG=4.7Ω, VGS=10V
(see Figure 16)
39
32
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by package
Source-drain current
Source-drain current
(pulsed)
2.5
10
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD= 2.5A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A, di/dt = 100A/µs,
VDD= 100V, Tj= 25°C
(see Figure 21)
584
2.3
8
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A, di/dt = 100A/µs,
VDD= 100V, Tj=150°C
(see Figure 21)
628
2.5
8.1
ns
µC
A
Table 9.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
Gate-source breakdown
voltage
IGS = ±1mA (open drain)
30
V


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