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STGB10NC60KDT4 数据表(PDF) 7 Page - STMicroelectronics |
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STGB10NC60KDT4 数据表(HTML) 7 Page - STMicroelectronics |
7 / 20 page STGx10NC60KD Electrical characteristics Doc ID 11423 Rev 6 7/20 Table 8. Collector-emitter diode Symbol Parameter Test conditions Min Typ. Max. Unit VF Forward on-voltage IF=5 A IF=5 A, Tj=125 °C - 2 1.6 - V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF=5 A, VR=40 V, di/dt=100 A/µs (see Figure 5) - 22 14 1.3 - ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF=5 A, VR=40 V, Tj=125 °C, di/dt=100 A/µs (see Figure 5) - 35 40 2.2 - ns nC A |
类似零件编号 - STGB10NC60KDT4 |
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类似说明 - STGB10NC60KDT4 |
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