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STP12NK60Z 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP12NK60Z
功能描述  N-channel 650 V @Tjmax, 0.53 廓, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP12NK60Z 数据表(HTML) 5 Page - STMicroelectronics

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STP12NK60Z, STF12NK60Z, STW12NK60Z
Electrical characteristics
Doc ID 11324 Rev 7
5/15
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
10
40
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 10 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD = 50 V
(see Figure 24)
-
358
3
17
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 24)
-
460
4.2
18.2
ns
µC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-Source breakdown
voltage
Igs=± 1 mA (open drain)
30
-
-
V


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