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STD2NK70Z 数据表(PDF) 6 Page - STMicroelectronics |
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STD2NK70Z 数据表(HTML) 6 Page - STMicroelectronics |
6 / 16 page Electrical characteristics STD2NK70Z - STD2NK70Z-1 6/16 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 1.6 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 6.4 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=1.6A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1.6A, di/dt = 100A/µs, VDD=50V, Tj=25°C (see Figure 16) 334 918 5.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1.6A, di/dt = 100A/µs, VDD= 50V, Tj=150°C (see Figure 16) 350 1050 6 ns µC A |
类似零件编号 - STD2NK70Z |
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类似说明 - STD2NK70Z |
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