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STD7NK30Z 数据表(PDF) 4 Page - STMicroelectronics |
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STD7NK30Z 数据表(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STx7NK30Z 4/15 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 150 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V Figure 15 11 25 20 10 ns ns ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 240 V, ID = 7 A, RG =4.7 Ω, VGS = 10 V Figure 15 8.5 8.5 20 ns ns ns Table 8. Source Drain Diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 5 20 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward On voltage ISD = 5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 40 V, Tj = 150 °C Figure 20 154 716 9.3 ns nC A Table 9. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Gate-source breakdown voltage Igs=± 1mA (open drain) 30 V |
类似零件编号 - STD7NK30Z |
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类似说明 - STD7NK30Z |
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