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STQ1NK60ZR-AP 数据表(PDF) 1 Page - STMicroelectronics |
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STQ1NK60ZR-AP 数据表(HTML) 1 Page - STMicroelectronics |
1 / 16 page July 2007 Rev 11 1/16 16 STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13 Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH™ Power MOSFET Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ ESD improved capability ■ New high voltage benchmark Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Application ■ Switching applications Figure 1. Internal schematic diagram Type VDSS RDS(on) ID Pw STD1LNK60Z-1 600V <15 Ω 0.8A 25W STQ1NK60ZR-AP 600V <15 Ω 0.3A 3W STN1NK60Z 600V <15 Ω 0.3A 3.3W 3 2 1 1 2 2 3 TO-92 (Ammopak) SOT-223 TO-251(IPAK) Table 1. Device summary Order codes Marking Package Packaging STD1LNK60Z-1 D1LNK60Z TO-251(IPAK) Tube STQ1NK60ZR-AP 1NK60ZR TO-92 Ammopak STN1NK60Z 1NK60Z SOT-223 Tape & reel www.st.com |
类似零件编号 - STQ1NK60ZR-AP |
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类似说明 - STQ1NK60ZR-AP |
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