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STP7NK80Z 数据表(PDF) 4 Page - STMicroelectronics |
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STP7NK80Z 数据表(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z 4/17 Doc ID 8979 Rev 6 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID =1 mA, VGS = 0 800 V IDSS Zero gate voltage Drain Current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C 1 50 µA µA IGSS Gate-body leakage Current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.6 A 1.5 1.8 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 2.6 A - 5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1138 122 25 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance VDS =0 , VDS = 0 to 640 V - 50 pF td(on) tr tr(off) tr Turn-on delay time Rise time Turn-off delay time Fall time VDD = 400 V, ID = 2.6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 20 12 45 20 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 640 V, ID = 5.2 A, VGS = 10 V (see Figure 18) - 40 7 21 56 nC nC nC tr(Voff) tr tc Off-voltage rise time Fall time Cross-over time VDD = 640 V, ID = 5.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 12 10 20 ns ns ns |
类似零件编号 - STP7NK80Z_10 |
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类似说明 - STP7NK80Z_10 |
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