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2SK3278 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SK3278 数据表(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page 2SK3278 No.6680-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Drain Current (DC) ID 15 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 45 A Allowable Power Dissipation PD 1W Tc=25 °C15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Rathings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance |yfs| VDS=10V, ID=7A 7 10 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=7A, VGS=10V 27 36 m Ω RDS(on)2 ID=4A, VGS=4.5V 40 56 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 530 pF Output Capacitance Coss VDS=10V, f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 90 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time tr See specified Test Circuit 130 ns Turn-OFF Delay Time td(off) See specified Test Circuit 40 ns Fall Time tf See specified Test Circuit 60 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=15A 10 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=15A 1.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=15A 1.0 nC Diode Forward Voltage VSD IS=15A, VGS=0 1.0 1.2 V Marking : K3278 Switching Time Test Circuit PW=10 µs D.C. ≤1% 10V 0V VIN P.G 50 Ω G S 2SK3278 ID=7A RL=2.1Ω VDD=15V VOUT VIN D 0 2.5 1.5 2.0 4.0 3.5 3.0 0.5 1.0 10 6 7 8 9 5 4 3 2 1 0 0 1.0 1.2 0.2 0.4 0.6 0.8 VDS=10V 10 6 7 8 9 5 4 3 2 1 0 3.0V VGS=2.5V IT02555 IT02556 ID -- VDS ID -- VGS Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V |
类似零件编号 - 2SK3278 |
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类似说明 - 2SK3278 |
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