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BC856BLT1G 数据表(PDF) 2 Page - ON Semiconductor |
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BC856BLT1G 数据表(HTML) 2 Page - ON Semiconductor |
2 / 7 page BC856ALT1G Series http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage BC856 Series (IC = −10 mA) BC857 Series BC858, BC859 Series V(BR)CEO −65 −45 −30 − − − − − − V Collector−Emitter Breakdown Voltage BC856 Series (IC = −10 mA, VEB = 0) BC857A, BC857B Only BC858, BC859 Series V(BR)CES −80 −50 −30 − − − − − − V Collector−Base Breakdown Voltage BC856 Series (IC = −10 mA) BC857 Series BC858, BC859 Series V(BR)CBO −80 −50 −30 − − − − − − V Emitter−Base Breakdown Voltage BC856 Series (IE = −1.0 mA) BC857 Series BC858, BC859 Series V(BR)EBO −5.0 −5.0 −5.0 − − − − − − V Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO − − − − −15 −4.0 nA mA ON CHARACTERISTICS DC Current Gain BC856A, BC857A, BC858A (IC = −10 mA, VCE = −5.0 V) BC856B, BC857B, BC858B BC857C, BC858C (IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C hFE − − − 125 220 420 90 150 270 180 290 520 − − − 250 475 800 − Collector−Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) − − − − −0.3 −0.65 V Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) − − −0.7 −0.9 − − V Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) −0.6 − − − −0.75 −0.82 V SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series NF − − − − 10 4.0 dB |
类似零件编号 - BC856BLT1G |
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类似说明 - BC856BLT1G |
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