BC856BLT1G datasheet(2/7 Pages) ONSEMI

部件名	BC856BLT1G

功能描述	General Purpose Transistors PNP Silicon

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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BC856ALT1G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

BC856 Series

(IC = −10 mA)

BC857 Series

BC858, BC859 Series

V(BR)CEO

−65

−45

−30

−

V

Collector−Emitter Breakdown Voltage

BC856 Series

(IC = −10 mA, VEB = 0)

BC857A, BC857B Only

BC858, BC859 Series

V(BR)CES

−80

−50

−30

−

V

Collector−Base Breakdown Voltage

BC856 Series

(IC = −10 mA)

BC857 Series

BC858, BC859 Series

V(BR)CBO

−80

−50

−30

−

V

Emitter−Base Breakdown Voltage

BC856 Series

(IE = −1.0 mA)

BC857 Series

BC858, BC859 Series

V(BR)EBO

−5.0

−

V

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (VCB = −30 V, TA = 150°C)

ICBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

BC856A, BC857A, BC858A

(IC = −10 mA, VCE = −5.0 V)

BC856B, BC857B, BC858B

BC857C, BC858C

(IC = −2.0 mA, VCE = −5.0 V)

BC856A, BC857A, BC858A

BC856B, BC857B, BC858B, BC859B

BC857C, BC858C, BC859C

hFE

−

125

220

420

90

150

270

180

290

520

−

250

475

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VCE(sat)

−

−0.3

−0.65

V

Base −Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VBE(sat)

−

−0.7

−0.9

−

V

Base −Emitter On Voltage

(IC = −2.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

VBE(on)

−0.6

−

−0.75

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz)

Cob

−

4.5

pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

BC856, BC857, BC858 Series

BC859 Series

NF

−

10

4.0

dB

类似零件编号 - BC856BLT1G

制造商	部件名	数据表	功能描述
ON Semiconductor	BC856BLT1G	109Kb / 8P	General Purpose Transistors June, 2004 ??Rev. 8
ON Semiconductor	BC856BLT1G	154Kb / 7P	General Purpose Transistors October, 2016 ??Rev. 15
First Silicon Co., Ltd	BC856BLT1G	179Kb / 8P	General Purpose Transistors
ON Semiconductor	BC856BLT1G	444Kb / 17P	PoE-PD Interface Controller, IEEE 802.3bt July, 2020 ??Rev. 2

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