DMS3016SSS

Document number: DS32266 Rev. 3 - 2

3 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3016SSS

010

20

15

25

30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

5

0.05

0

0.04

0.01

0.02

0.03

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

0

5

10

15

20

25

30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0

0.01

0.02

0.04

0.03

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

V

= 4.5V

GS

T = 125°C

A

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

V

= 4.5V

I = 10A

GS

D

V

= 10V

I = 20A

GS

D

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.01

0.03

0.02

V

= 4.5V

I = 10A

GS

D

V

= 10V

I = 20A

GS

D

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

0

0.5

1.0

1.5

2.0

2.5

3.0

I = 100mA

D

0

4

8

12

16

20

0

0.4

0.6

0.8

1.0

1.2

Fig. 8 Diode Forward Voltage vs. Current

V

, SOURCE-DRAIN VOLTAGE (V)

SD

0.2

T = 25°C

A