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IRLML2060TRPBF 数据表(PDF) 4 Page - International Rectifier

部件名 IRLML2060TRPBF
功能描述  HEXFET Power MOSFET
Download  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRLML2060TRPBF 数据表(HTML) 4 Page - International Rectifier

  IRLML2060TRPBF Datasheet HTML 1Page - International Rectifier IRLML2060TRPBF Datasheet HTML 2Page - International Rectifier IRLML2060TRPBF Datasheet HTML 3Page - International Rectifier IRLML2060TRPBF Datasheet HTML 4Page - International Rectifier IRLML2060TRPBF Datasheet HTML 5Page - International Rectifier IRLML2060TRPBF Datasheet HTML 6Page - International Rectifier IRLML2060TRPBF Datasheet HTML 7Page - International Rectifier IRLML2060TRPBF Datasheet HTML 8Page - International Rectifier IRLML2060TRPBF Datasheet HTML 9Page - International Rectifier Next Button
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IRLML2060TRPbF
4
www.irf.com
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0
0.5
1.0
1.5
2.0
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 48V
VDS= 30V
VDS= 12V
ID= 1.2A
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0.1
1
10
TJ = 25°C
TJ = 150°C
VGS = 0V
0
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec


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