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S5L9250B 数据表(PDF) 73 Page - Samsung semiconductor |
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S5L9250B 数据表(HTML) 73 Page - Samsung semiconductor |
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73 / 163 page  DATA SHEET S5L9250B 73 Related Memory Name Address Function Data Value tBRK1 00B0 brake time for 1 track jump 18 tBRK 00B1 brake time for upper 1 track jump C Tstbl 00B2 stable time after jump 0 Twin 00B3 Track Jump TZC blind Time 0x10 90 µs NUMS 00B4 jump track number Vkick 00B5 initial kick level for velocity jump - Rtrk 00B6 residual track number([vNUMS]-H/W counter-Vcmp) Vtmp 00B7 center calculation value memory Vctl 00B8 accumulation value of difference between current and profile velocity King 00B9 Velocity error VTKp 00BA plus kick for velocity control jump 2000 VTKm 00BB minus kick for velocity control jump E000 TMedge 00BC edge counter KICKedge 00BD velocity control start edge 2 RVSnum 00BE Reverse jump check minimum track number Jnum 00BF Number of tracks jumped (for stepping motor sled move) tJnoise 00C0 te zero cross noise cancel JMPCMDbuf 004C Jump command save buffer JMPDATAbuf 004D Jump data save buffer Jcomp 00F3 compensation for jump tLBoS 00DA lens brake time 500 tGUpS 00DB F gain up time 300 tTGUpS 00DC T gain up time 3A9 |
类似零件编号 - S5L9250B |
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类似说明 - S5L9250B |
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