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KM681000BLRE-10L 数据表(PDF) 9 Page - Samsung semiconductor |
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KM681000BLRE-10L 数据表(HTML) 9 Page - Samsung semiconductor |
9 / 11 page PRELIMINARY Revision 0.3 KM681000B Family CMOS SRAM April 1996 Address CS1 Data Valid CS2 WE Data in Data out High-Z High-Z TIMING WAVEFORM OF WRITE CYCLE (2) (CS2 Controlled) NOTES (WRITE CYCLE) 1. A write occurs during the overlap of low CS1, high CS2 and low WE. A write begins at the latest transition among CS1 going low, CS2 going high and WE going low. A write ends at the earliest transition among CS1 going high, CS2 going low and WE going high, tWP is measured from the beginning or write to the end of write. 2. tCW is measured from the later of CS1 going low or CS2 going high to the end of write. 3. tAS is measured from the address calid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR1 applied in case a write ends at CS1, or WE going high, tWR2 applied in case a write ends at CS2 going to low. FUNCTIONAL DESCRIPTION * X means don't care CS1 CS2 WE OE Mode I/O Pin Current Mode H X X X Power Down High-Z ISB,ISB1 X L X X Power Down High-Z ISB,ISB1 L H H H Output Disable High-Z ICC L H H L Read Dout ICC L H L X Write Din ICC tWC tCW(2) tWR2(4) tAW tWP(1) tDW tDH tAS(3) tCW(2) |
类似零件编号 - KM681000BLRE-10L |
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类似说明 - KM681000BLRE-10L |
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