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KM684000CLP-5 数据表(PDF) 7 Page - Samsung semiconductor

部件名 KM684000CLP-5
功能描述  512Kx8 bit Low Power CMOS Static RAM
Download  9 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM684000CLP-5 数据表(HTML) 7 Page - Samsung semiconductor

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KM684000C Family
CMOS SRAM
Revision 1.0
April 1999
7
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
Address
CS
tCW(2)
tWR(4)
TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)
Address
CS
tWC
tWR(4)
tAS(3)
tWP(1)
tDW
tDH
tOW
tWHZ
Data Undefined
Data Valid
WE
Data in
Data out
tDW
tDH
Data Valid
WE
Data in
Data out
High-Z
High-Z
tWC
tAW
tAS(3)
tCW(2)
tWP(1)
tAW
NOTES (WRITE CYCLE)
1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE
going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write
to the end of write.
2. tCW is measured from the CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
DATA RETENTION WAVE FORM
CS controlled
VCC
4.5V
2.2V
VDR
CS
GND
Data Retention Mode
CS
≥VCC - 0.2V
tSDR
tRDR


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