KM416V10CJ-L5 datasheet(3/35 Pages) SAMSUNG

部件名	KM416V10CJ-L5

功能描述	1M x 16Bit CMOS Dynamic RAM with Extended Data Out

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制造商	SAMSUNG [Samsung semiconductor]

网页	http://www.samsung.com/Products/Semiconductor

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KM416C1004C, KM416C1204C

CMOS DRAM

KM416V1004C, KM416V1204C

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted

to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability.

Parameter

Symbol

Rating

Units

3.3V

5V

Voltage on any pin relative to VSS

VIN,VOUT

-0.5 to +4.6

-1.0 to +7.0

V

Voltage on VCC supply relative to VSS

VCC

-0.5 to +4.6

-1.0 to +7.0

V

Storage Temperature

Tstg

-55 to +150

°C

Power Dissipation

PD

1

W

Short Circuit Output Current

IOS

50

mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70

°C)

*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC

*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS

Parameter

Symbol

3.3V

5V

Units

Min

Typ

Max

Min

Typ

Max

Supply Voltage

VCC

3.0

3.3

3.6

4.5

5.0

5.5

V

Ground

VSS

0

V

Input High Voltage

VIH

2.0

-

VCC+0.3*1

2.4

-

VCC+1.0*1

V

Input Low Voltage

VIL

-0.3*2

-

0.8

-1.0*2

-

0.8

V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Max

Parameter

Symbol

Min

Max

Units

3.3V

Input Leakage Current (Any input 0

≤VIN≤VIN+0.3V,

all other input pins not under test=0 Volt)

II(L)

-5

5

uA

Output Leakage Current

(Data out is disabled, 0V

≤VOUT≤VCC)

IO(L)

-5

5

uA

Output High Voltage Level(IOH=-2mA)

VOH

2.4

-

V

Output Low Voltage Level(IOL=2mA)

VOL

-

0.4

V

5V

Input Leakage Current (Any input 0

≤VIN≤VIN+0.5V,

all other input pins not under test=0 Volt)

II(L)

-5

5

uA

Output Leakage Current

(Data out is disabled, 0V

≤VOUT≤VCC)

IO(L)

-5

5

uA

Output High Voltage Level(IOH=-5mA)

VOH

2.4

-

V

Output Low Voltage Level(IOL=4.2mA)

VOL

-

0.4

V

类似零件编号 - KM416V10CJ-L5

制造商	部件名	数据表	功能描述
Samsung semiconductor	KM416V1000B	84Kb / 8P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
	KM416V1000C	767Kb / 34P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
	KM416V1004A	1Mb / 35P	1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
	KM416V1004A-6	1Mb / 35P	1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
	KM416V1004A-7	1Mb / 35P	1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

More results

类似说明 - KM416V10CJ-L5

制造商	部件名	数据表	功能描述
Samsung semiconductor	K4E171611D	553Kb / 35P	1M x 16Bit CMOS Dynamic RAM with Extended Data Out
	KM416C254D	840Kb / 36P	256K x 16Bit CMOS Dynamic RAM with Extended Data Out
	KM416V4004C	808Kb / 36P	4M x 16bit CMOS Dynamic RAM with Extended Data Out
	KM416V1204BJ	2Mb / 31P	1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
	K4E661612C	884Kb / 36P	4M x 16bit CMOS Dynamic RAM with Extended Data Out
	K4E661612B	885Kb / 36P	4M x 16bit CMOS Dynamic RAM with Extended Data Out
	KM416V4004B	806Kb / 36P	4M x 16bit CMOS Dynamic RAM with Extended Data Out
	K4E661611D	882Kb / 36P	4M x 16bit CMOS Dynamic RAM with Extended Data Out
	KM416C4004C	946Kb / 36P	4M x 16bit CMOS Dynamic RAM with Extended Data Out
	KM416V1004A	1Mb / 35P	1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

More results

KM416V10CJ-L5 数据表(PDF) 3 Page - Samsung semiconductor

KM416V10CJ-L5 数据表(HTML) 3 Page - Samsung semiconductor

类似零件编号 - KM416V10CJ-L5

类似说明 - KM416V10CJ-L5

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KM416V10CJ-L5 数据表(PDF) 3 Page - Samsung semiconductor

KM416V10CJ-L5 数据表(HTML) 3 Page - Samsung semiconductor

类似零件编号 - KM416V10CJ-L5

类似说明 - KM416V10CJ-L5

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