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KM44C1000D 数据表(PDF) 7 Page - Samsung semiconductor |
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KM44C1000D 数据表(HTML) 7 Page - Samsung semiconductor |
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7 / 21 page  KM44C1000D, KM44V1000D CMOS DRAM TEST MODE CYCLE ( Note 11 ) Note) *1 : 5V only Parameter Symbol -5*1 -6 -7 Units Notes Min Max Min Max Min Max Random read or write cycle time tRC 95 115 135 ns Read-modify-write cycle time tRWC 138 160 190 ns Access time from RAS tRAC 55 65 75 ns 3,4,10 Access time from CAS tCAC 18 20 25 ns 3,4,5 Access time from column address tAA 30 35 40 ns 3,10 RAS pulse width tRAS 55 10K 65 10K 75 10K ns CAS pulse width tCAS 18 10K 20 10K 25 10K ns RAS hold time tRSH 18 20 25 ns CAS hold time tCSH 55 65 75 ns Column Address to RAS lead time tRAL 30 35 40 ns CAS to W delay time tCWD 41 45 55 ns 7 RAS to W delay time tRWD 78 90 105 ns 7 Column Address to W delay time tAWD 53 60 70 ns 7 Fast Page mode cycle time tPC 40 45 50 ns Fast Page mode read-modify-write cycle tPRWC 81 90 105 ns RAS pulse width (Fast Page cycle) tRASP 55 200K 65 200K 75 200K ns Access time from CAS precharge tCPA 35 40 45 ns 3 OE access time tOEA 20 20 25 ns OE to data delay tOED 18 20 25 ns OE command hold time tOEH 18 20 25 ns |
类似零件编号 - KM44C1000D |
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类似说明 - KM44C1000D |
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