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KM416C4100B 数据表(PDF) 9 Page - Samsung semiconductor |
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KM416C4100B 数据表(HTML) 9 Page - Samsung semiconductor |
9 / 35 page KM416C4000B, KM416C4100B CMOS DRAM tASC, tCAH are referenced to the earlier CAS falling edge. tCP is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle. tCWL is specified from W falling edge to the earlier CAS rising edge. tCSR is referenced to the earlier CAS falling edge before RAS transition low. tCHR is referenced to the later CAS rising edge after RAS transition low. tDS is specified for the earlier CAS falling edge and tDH is specified by the later CAS falling edge. If tRASS ≥100us, then RAS precharge time must use tRPS instead of tRP. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K/8K) cycles of burst refresh must be executed within 64ms before and after self refresh, in order to meet refresh specification. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification. tCSR tCHR RAS LCAS UCAS tDS tDH LCAS UCAS DQ0 ~ DQ15 Din 21. 20. 19. 15. 14. 13. 18. 17. 16. 22. |
类似零件编号 - KM416C4100B |
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类似说明 - KM416C4100B |
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