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KM416C1000B 数据表(PDF) 6 Page - Samsung semiconductor |
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KM416C1000B 数据表(HTML) 6 Page - Samsung semiconductor |
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6 / 8 page  KM416C1000B, KM416C1200B CMOS DRAM KM416V1000B, KM416V1200B AC CHARACTERISTICS (Continued) Parameter Symbol -5 -6 -7 Units Notes Min Max Min Max Min Max Data set-up time tDS 0 0 0 ns 8,16 Data hold time tDH 10 10 15 ns 8,16 Refresh period (1K, Normal) tREF 16 16 16 ms Refresh period (4K, Normal) tREF 64 64 64 ms Refresh period (L-ver) tREF 128 128 128 ms Write command set-up time tWCS 0 0 0 ns 6 CAS to W delay time tCWD 36 40 50 ns 6,12 RAS to W delay time tRWD 73 85 95 ns 6 Column address to W delay time tAWD 48 55 60 ns 6 CAS precharge to W delay time tCPWD 53 60 65 ns 6 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns 14 CAS hlod time (CAS -before-RAS refresh) tCHR 10 10 15 ns 15 RAS to CAS precharge time tRPC 5 5 5 ns CAS precharge time (CBR counter test cycle) tCPT 20 20 25 ns Access time from CAS precharge tCPA 30 35 40 ns 3 Fast Page mode cycle time tPC 35 40 45 ns Fast Page read-modify-write cycle time tPRWC 76 80 95 ns CAS precharge time (Fast Page cycle) tCP 10 10 10 ns 11 RAS pulse width (Fast Page cycle) tRASP 50 200K 60 200K 70 200K ns RAS hold time from CAS precharge tRHCP 30 35 40 ns OE access time tOEA 13 15 20 ns 3 OE to data delay tOED 13 15 20 ns Output buffer turn off delay time from OE tOEZ 0 13 0 15 0 20 ns OE command hold time tOEH 13 15 20 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 17 RAS precharge time (C-B-R self refresh) tRPS 90 110 130 ns 17 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 17 |
类似零件编号 - KM416C1000B |
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类似说明 - KM416C1000B |
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