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K9F2808Q0C 数据表(PDF) 2 Page - Samsung semiconductor |
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K9F2808Q0C 数据表(HTML) 2 Page - Samsung semiconductor |
2 / 33 page K9F2816U0C-YCB0,YIB0 FLASH MEMORY 2 K9F2816U0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0 K9F2808Q0C-DCB0,DIB0 K9F2816Q0C-DCB0,DIB0 K9F2808U0C-VCB0,VIB0 GENERAL DESCRIPTION FEATURES • Voltage Supply - 1.8V device(K9F28XXQ0C) : 1.7~1.95V - 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V • Organization - Memory Cell Array - X8 device(K9F2808X0C) : (16M + 512K)bit x 8bit - X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit - Data Register - X8 device(K9F2808X0C) : (512 + 16)bit x 8bit - X16 device(K9F2816X0C) : (256 + 8)bit x16bit • Automatic Program and Erase - Page Program - X8 device(K9F2808X0C) : (512 + 16)Byte - X16 device(K9F2816X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F2808X0C) : (16K + 512)Byte - X16 device(K9F2816X0C) : ( 8K + 256)Word • Page Read Operation - Page Size - X8 device(K9F2808X0C) : (512 + 16)Byte - X16 device(K9F2816X0C) : (256 + 8)Word - Random Access : 10 µs(Max.) - Serial Page Access : 50ns(Min.) 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory • Fast Write Cycle Time - Program time : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Unique ID for Copyright Protection • Package - K9F28XXU0C-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F28XXU0C-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package - K9F28XXX0C-DCB0/DIB0 63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm) - K9F28XXX0C-HCB0/HIB0 63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm) - Pb-free Package - K9F2808U0C-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F2808U0C-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package * K9F2808U0C-V/F(WSOPI ) is the same device as K9F2808U0C-Y/P(TSOP1) except package type. Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be per- formed in typical 200 µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typ- ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro- gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write- intensive systems can take advantage of the K9F28XXX0C’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F28XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9F2808Q0C-D,H 1.7 ~ 1.95V X8 TBGA K9F2816Q0C-D,H X16 K9F2808U0C-Y,P 2.7 ~ 3.6V X8 TSOP1 K9F2808U0C-D,H TBGA K9F2808U0C-V,F WSOP1 K9F2816U0C-Y,P X16 TSOP1 K9F2816U0C-D,H TBGA |
类似零件编号 - K9F2808Q0C |
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类似说明 - K9F2808Q0C |
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