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UMZ1N Datasheet(数据表) 4 Page - Rohm

部件型号  UMZ1N
说明  General purpose transistor (dual transistors)
下载  5 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

UMZ1N Datasheet(HTML) 4 Page - Rohm

  UMZ1N 数据表 HTML 1Page - Rohm UMZ1N 数据表 HTML 2Page - Rohm UMZ1N 数据表 HTML 3Page - Rohm UMZ1N 数据表 HTML 4Page - Rohm UMZ1N 数据表 HTML 5Page - Rohm  
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 4 page
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EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A
4/4
Tr2 (PNP)
−0.2
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
VCE=
6V
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta=100˚C
25˚C
40˚C
Fig.12 Grounded emitter propagation
characteristics
−0.4
−4
−8
−1.2
0
−2
−6
−10
−0.8
−1.6
−2.0
−3.5µA
−7.0
−10.5
−14.0
−17.5
−21.0
−24.5
−28.0
−31.5
IB=0
Ta=25˚C
−35.0
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.13 Grounded emitter output
characteristics ( I )
−40
−80
−5
−3
−4
−2
−1
−20
−60
−100
0
IB=0
Ta=25˚C
−50µA
−100
−150
−200
−250
−500
−450
−400
−350
−300
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.14 Grounded emitter output
characteristics ( II )
COLLECTOR CURRENT : IC
(mA)
Fig.15 DC current gain vs. collector
current ( I )
500
200
100
50
−0.2 −0.5 −1 −2
−5 −10 −20
−50 −100
Ta=25˚C
VCE=
−5V
−3V
−1V
500
200
100
50
−0.2 −0.5 −1 −2
−5 −10 −20
−50 −100
VCE=
−6V
Ta=100˚C
−40˚C
25˚C
COLLECTOR CURRENT : IC
(mA)
Fig.16 DC current gain vs. collector
current ( II )
−0.1
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−1
−0.5
−0.2
−0.05
Ta=25˚C
IC/IB
=50
20
10
COLLECTOR CURRENT : IC
(mA)
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
−0.1
−0.2 −0.5 −1 −2
−5 −10 −20
−50 −100
−1
−0.5
−0.2
−0.05
lC/lB=10
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC
(mA)
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
50
100
0.5
20
50
100
200
500
1000
12
5
10
Ta=25˚C
VCE
=
−12V
EMITTER CURRENT : IE
(mA)
Fig.19 Gain bandwidth product vs.
emitter current
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
Fig.20 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25˚C
f
=1MHz
IE
=0A
IC
=0A




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