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IMZ4 Datasheet(数据表) 2 Page - Rohm

部件型号  IMZ4
说明  General purpose transistor (dual transistors)
下载  5 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

IMZ4 Datasheet(HTML) 2 Page - Rohm

  IMZ4 数据表 HTML 1Page - Rohm IMZ4 数据表 HTML 2Page - Rohm IMZ4 数据表 HTML 3Page - Rohm IMZ4 数据表 HTML 4Page - Rohm IMZ4 数据表 HTML 5Page - Rohm  
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 2 page
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IMZ4
Transistors
Rev.A
2/4
Electrical characteristics (Ta=25
°C)
Tr1 (NPN)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
120
250
6.5
1.0
1.0
560
0.6
V
IC=100
µA
IC
=1mA
IE
=100
µA
VCB
=20V
VEB
=4V
VCE
=3V, IC=100mA
VCE
=5V, IE=
−20mA, f=100MHz
IC/IB
=500mA/50mA
VCB
=10V, IE=0A, f=1MHz
V
V
µA
µA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current.
Tr2 (PNP)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
−40
−32
−5
120
200
7
−1.0
−1.0
560
−0.6
V
IC=
−100µA
IC
=
−1mA
IE
=
−100µA
VCB
=
−20V
VEB
=
−4V
VCE
=
−3V, IC= −100mA
VCE
=
−5V, IE= 20mA, f= 100MHz
IC/IB
=
−300mA/−30mA
VCB
=
−10V, IE= 0A, f= 1MHz
V
V
µA
µA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current.
Packaging specifications
Package
Code
TR
T108
3000
3000
Taping
Basic ordering
unit (pieces)
UMZ1N
T2R
8000
EMZ1
IMZ1A
Type




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