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IMT17 Datasheet(数据表) 1 Page - Rohm |
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IMT17 Datasheet(HTML) 1 Page - Rohm |
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1 page 
IMT17 Transistors Rev.A 1/2 General purpose transistor (isolated dual transistors) IMT17 Applications External dimensions (Unit : mm) General purpose small signal amplifier Features 1) Two 2SA1036K chips in an SMT package. 2) Same size as SMT3 package, so same mounting machine can be used for both. 3) Transistor elements are independent, eliminating interference. 4) High collector current. IC = −500mA 5) Mounting cost, and area, are reduced by one half. ROHM : SMT6 EIAJ : SC-74 Tr2 Tr1 (4) (5) (6) (3) (2) (1) (1) (2) (3) 0.3 + 0.1 −0.05 (6) (5) (4) 0.95 0.95 1.9 ±0.2 2.9 ±0.2 1.1+0.2 0.8 ±0.1 −0.1 0 to 0.1 0.15−0.06 +0.1 Abbreviated symbol: T17 All terminals have same dimensions Structure Packaging specifications Epitaxial planar type Packaging type Taping Code IMT17 Part No. T110 3000 Basic ordering unit (pieces) PNP silicon transistor The following characteristics apply to both Tr1 and Tr2. Absolute maximum ratings (Ta=25 °C) Parameter Symbol Limits Unit VCBO −60 V VCEO −50 V VEBO −5V IC −500 mA Tj 150 °C Tstg −55 to +150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Electrical characteristics(Ta=25 °C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −60 −50 −5 − − 120 − − − − − − − − − − 200 7 − − − −0.1 −0.1 390 −0.6 − − VIC = −100µA IC = −1mA IE = −100µA V = −30V V = −4V VCE = −3V, IC= −100mA ∗ VCE = −5V, IE= 20mA, f= 100MHz IC/IB = −500mA/ −50mA VCB = −10V, IE= 0A, f= 1MHz V V µA µA − V MHz pF Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance ∗ Measured using pulse current. |
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