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IMT17 Datasheet(数据表) 1 Page - Rohm

部件型号  IMT17
说明  General purpose transistor (isolated dual transistors)
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

IMT17 Datasheet(HTML) 1 Page - Rohm

  IMT17 数据表 HTML 1Page - Rohm IMT17 数据表 HTML 2Page - Rohm IMT17 数据表 HTML 3Page - Rohm  
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IMT17
Transistors
Rev.A
1/2
General purpose transistor
(isolated dual transistors)
IMT17
Applications
External dimensions (Unit : mm)
General purpose small signal amplifier
Features
1) Two 2SA1036K chips in an SMT package.
2) Same size as SMT3 package, so same mounting
machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
4) High collector current. IC =
−500mA
5) Mounting cost, and area, are reduced by one half.
ROHM : SMT6
EIAJ : SC-74
Tr2
Tr1
(4)
(5)
(6)
(3)
(2)
(1)
(1)
(2)
(3)
0.3 +
0.1
−0.05
(6)
(5)
(4)
0.95 0.95
1.9
±0.2
2.9
±0.2
1.1+0.2
0.8
±0.1
−0.1
0 to 0.1
0.15−0.06
+0.1
Abbreviated symbol: T17
All terminals have same dimensions
Structure
Packaging specifications
Epitaxial planar type
Packaging type
Taping
Code
IMT17
Part No.
T110
3000
Basic ordering unit (pieces)
PNP silicon transistor
The following characteristics apply to both Tr1 and Tr2.
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
VCBO
−60
V
VCEO
−50
V
VEBO
−5V
IC
−500
mA
Tj
150
°C
Tstg
−55 to +150
°C
Pd
300(TOTAL)
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
200mW per element must not be exceeded.
Electrical characteristics(Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
−60
−50
−5
120
200
7
−0.1
−0.1
390
−0.6
VIC
= −100µA
IC
= −1mA
IE
= −100µA
V
= −30V
V
= −4V
VCE
= −3V, IC= −100mA
VCE
= −5V, IE= 20mA, f= 100MHz
IC/IB
= −500mA/ −50mA
VCB
= −10V, IE= 0A, f= 1MHz
V
V
µA
µA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Measured using pulse current.




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