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IMT17 Datasheet(数据表) 2 Page - Rohm

部件型号  IMT17
说明  General purpose transistor (isolated dual transistors)
下载  3 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

IMT17 Datasheet(HTML) 2 Page - Rohm

  IMT17 数据表 HTML 1Page - Rohm IMT17 数据表 HTML 2Page - Rohm IMT17 数据表 HTML 3Page - Rohm  
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IMT17
Transistors
Rev.A
2/2
Electrical characteristic curves
−0.2
0
−500
−200
−100
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.4−0.6−0.8−1.0−1.2−1.4−1.6−1.8−2.0−2.2
VCE
= −3V
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta
=100
°C
25
°C
−55
°C
Fig.1
Grounded emitter propagation
characteristics
−1
−40
−80
−3
0
−20
−60
−100
0
−2
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25
°C
Fig.2 Grounded emitter output
characteristics (
Ι )
IB
=0A
−0.1mA
−0.2mA
−0.3mA
−0.4mA
−0.5mA
−0.6mA
−0.7mA
−0.8mA
−0.9mA
−1mA
−200
−400
−10
−5
0
−100
−300
−500
0
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25
°C
Fig.3 Grounded emitter output
characteristics (
ΙΙ)
IB
=0A
−0.5mA
−1.0mA
−1.5mA
−2.0mA
−2.5mA
−3.0mA
−3.5mA
−4.0mA
−4.5mA
−5.0mA
500
1000
200
100
50
20
COLLECTOR CURRENT : IC
(mA)
−1 −2
−5 −10 −20 −50−100−200−500−1000
Ta
=25
°C
VCE
= −5V
−3V
−1V
Fig.4
DC current gain vs. collector
current (
Ι )
500
1000
200
100
50
20
−1 −2
−5 −10 −20 −50−100−200 −500 −1000
COLLECTOR CURRENT : IC
(mA)
VCE
= −3V
Fig.5 DC current gain vs. collector
current (
ΙΙ)
Ta
=100
°C
25
°C
−55
°C
−0.1
−1 −2
−5 −10 −20 −50 −100 −200 −500
−1
−0.5
−0.2
−0.05
−0.02
Ta
=25
°C
COLLECTOR CURRENT : IC
(mA)
IC/IB
=50
20
10
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι )
−0.05
−0.03
−0.02
−0.01
−1 −2
−5 −10 −20 −50 −100 −200 −500−1000
−0.5
−0.3
−0.2
−0.1
−1.0
lC/lB
=10
COLLECTOR CURRENT : IC
(mA)
Fig.7
Collector-emitter saturation
voltage vs. collector current (
ΙΙ)
Ta
=100
°C
25
°C
−55
°C
50
0.5
20
50
100
200
500
1000
12
5
10
EMITTER CURRENT : IE
(mA)
Ta
=25
°C
VCE
= −5V
Fig.8 Gain bandwidth product vs.
emitter current
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE
: VEB
(V)
Fig.9
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
−50
−0.5
−20
2
5
10
50
100
−1
−2
−5
−10
20
Ta
=25
°C
f
=1MHz
IE
=0A
IC
=0A




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