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FMS3 Datasheet(数据表) 1 Page - Rohm

部件型号  FMS3
说明  General purpose (dual transistors)
下载  1 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

FMS3 Datasheet(HTML) 1 Page - Rohm

  FMS3 数据表 HTML 1Page - Rohm  
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 1 page
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FMS3 / FMS4 / IMT4
Transistors
General purpose (dual transistors)
FMS3 / FMS4 / IMT4
!Features
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
!
!
!
!Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
−120
−120
−5
−50
300 (TOTAL)
150
−55∼+150
Unit
V
V
V
mA
mW
˚C
˚C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
!
!
!
!Package, marking, and Packaging specifications
FMS3
SMT5
S3
T148
3000
FMS4
SMT5
S4
T148
3000
IMT4
SMT6
T4
T108
3000
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
!
!
!
!Circuit diagram
FMS3
FMS4
IMT4
!
!
!
!External dimensions
(Units : mm)
ROHM : SMT5
EIAJ : SC-74A
IMT4
FMS4
FMS3
Each lead has same dimensions
0.3to0.6
1.6
2.8
ROHM : SMT5
EIAJ : SC-74A
Each lead has same dimensions
0.3to0.6
1.6
2.8
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
0.3to0.6
2.8
1.6
!
!
!
!Electrical characteristics
(Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
−120
−120
−5
−0.5
−0.5
−0.5
V
V
V
µA
µA
V
IC=
−50µA
IC
=
−1mA
IE
=
−50µA
VCB
=
−100V
VEB
=
−4V
IC/IB
=
−10mA/−1mA
hFE
180
820
VCE
=
−6V, IC−2mA
Transition frequency
fT
140
MHz
VCE
=
−12V, IE=2mA, f=100MHz
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage




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