2SK3065

Transistors

Small switching (60V, 2A)

2SK3065

!Features

1) Low on resistance.

2) High-speed switching.

3) Optimum for a pocket resource etc. because of

undervoltage actuation (2.5V actuation).

4) Driving circuit is easy.

5) Easy to use parallel.

6) It is strong to an electrostatic discharge.

!Structure

Silicon N-channel

!External dimensions

(Units : mm)

ROHM : MPT3

EIAJ : SC-62

(1) Gate

(2) Drain

(3) Source

−0.05

+0.1

+0.2

−0.1

(3)

(2)

(1)

3.0

±0.2

1.5

±0.1

1.5

±0.1

0.4

±0.1

0.5

±0.1

0.4

±0.1

0.4

1.5

±0.1

4.5

1.6

±0.1

Abbreviated symbol : KE

MOS FET transistor

!Absolute maximum ratings

(Ta = 25

°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation(Tc=25

°C)

Channel temperature

Storage temperature

Tch

60

V

V

A

A

W

°C

±20

2

A

Continuous

Pulsed

Continuous

Pulsed

A

8

2

8

150

Tstg

°C

−55∼+150

Symbol

Limits

Unit

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.

Reverse drain

current

0.5

!Internal equivalent circuit

Drain

Source

Gate

∗Gate

Protection

Diode

∗ A protection diode has been built in between the

gate and the source to protect against static

electricity when the product is in use.

Use the protection circuit when rated voltages are

exceeded.

!Electrical characteristics

(Ta = 25

°C)

Parameter

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test Conditions

= 0V

f

= 1MHz

= 10V

= 4V

30V

= 30Ω

= 10Ω

µA

pF

Ω

Ω

S

Unit

V

µA

V

pF

pF

ns

ns

ns

ns

−

−

60

−

0.8

−

1.5

Min.

−

−

−

−

−

−

−

160

−

−−

−

−

0.25

−

Typ.

85

25

20

50

120

70

0.35

−

±10

10

1.5

0.32

−

Max.

−

−

−

−

−

−

0.45

Symbol

Static drain-source on-state

resistance