MJE371G datasheet(1/3 Pages) ONSEMI

部件名	MJE371G

功能描述	Plastic Medium?뭁ower PNP Silicon Transistor

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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February, 2006 − Rev. 6

1

Publication Order Number:

MJE371/D

MJE371

Plastic Medium−Power

PNP Silicon Transistor

This device is designed for use in general−purpose amplifier and

switching circuits. Recommended for use in 5 to 20 Watt audio

amplifiers utilizing complementary symmetry circuitry.

Features

• DC Current Gain − hFE = 40 (Min) @ IC

= 1.0 Adc

• MJE371 is Complementary to NPN MJE521

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

40

Vdc

Collector−Base Voltage

VCB

40

Vdc

Emitter−Base Voltage

VEB

4.0

Vdc

Collector Current

− Continuous

− Peak

IC

4.0

8.0

Adc

Base Current

− Continuous

IB

2.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

40

320

W

mW/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

qJC

3.12

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0) (Note 1)

VCEO(sus)

40

−

Vdc

Collector−Base Cutoff Current

(VCB = 40 Vdc, IE = 0)

ICBO

−

100

mAdc

Emitter−Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

100

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

40

−

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJE371

TO−225

500 Units/Box

4 AMPERES

POWER TRANSISTOR

PNP SILICON

40 VOLTS, 40 WATTS

http://onsemi.com

MJE371G

TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

2 1

3

MARKING DIAGRAM

YWW

JE371G

Y

= Year

WW

= Work Week

JE371 = Device Code

G

= Pb−Free Package

类似零件编号 - MJE371G

制造商	部件名	数据表	功能描述
ON Semiconductor	MJE371G	101Kb / 3P	Plastic Medium-Power PNP Silicon Transistor December, 2013 ??Rev. 9

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类似说明 - MJE371G

制造商	部件名	数据表	功能描述
ON Semiconductor	MJE521	67Kb / 4P	Plastic Medium?뭁ower NPN Silicon Transistor February, 2006 ??Rev. 5
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MJE371G 数据表(PDF) 1 Page - ON Semiconductor

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类似说明 - MJE371G

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