BD249CG datasheet(2/6 Pages) ONSEMI

部件名	BD249CG

功能描述	NPN High?뭁ower Transistor

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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2 / 6 page

BD249C

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mA, IB = 0)

VCEO(sus)

100

−

V

Collector−Emitter Cutoff Current

(VCE = 60 V, IB = 0)

ICEO

−

1.0

mA

Collector−Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−

0.7

mA

Emitter−Base Cutoff Current

(VEB = 5.0 V, IC = 0)

IEBO

−

1.0

mA

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.5 A, VCE = 4.0 V)

(IC = 15 A, VCE = 4.0 V)

(IC = 25 A, VCE = 4.0 V)

hFE

25

10

5.0

−

Collector−Emitter Saturation Voltage

(IC = 15 A, IB = 1.5 A)

(IC = 25 A, IB = 5.0 A)

VCE(sat)

−

1.8

4.0

V

Base−Emitter On Voltage

(IC = 15 A, VCE = 4.0 V)

(IC = 25 A, VCE = 4.0 V)

VBE(on)

−

2.0

4.0

V

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)

hfe

25

−

Current−Gain — Bandwidth Product

(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)

fT

3.0

−

MHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

0

125

0

25

175

75

100

75

100

50

125

25

150

50

类似零件编号 - BD249CG

制造商	部件名	数据表	功能描述
Mospec Semiconductor	BD249C	131Kb / 3P	POWER TRANSISTORS(25A,125W)
Power Innovations Ltd	BD249C	93Kb / 6P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD249C	109Kb / 5P	NPN SILICON POWER TRANSISTORS
Savantic, Inc.	BD249C	145Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	BD249C	134Kb / 3P	Silicon NPN Power Transistors

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