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2SCR514R 数据表(PDF) 1 Page - Rohm |
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2SCR514R 数据表(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (80V / 0.7A) 2SCR514R Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 300mA / 15mA) 2) High speed switching Structure NPN Silicon epitaxial planar transistor Applications Driver Inner circuit Package TSMT3 Code TL Basic ordering unit (pieces) 3000 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6V DC IC 0.7 A Pulsed ICP 1.4 A PD 0.5 W PD 1.0 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm 3] ceramic substrate. Power dissipation Packaging specifications Collector current Parameter Type *1 *2 *3 TSMT3 (1) (2) (3) Abbreviated symbol : ND (1) Base (2) Emittrer (3) Collector (1) (3) (2) (1) Base (2) Emittrer (3) Collector 1/5 2010.06 - Rev.A |
类似零件编号 - 2SCR514R |
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类似说明 - 2SCR514R |
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