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Midium Power Transistors (80V / 0.7A)

2SCR514R

 Features

 Dimensions (Unit : mm)

1) Low saturation voltage, typically

2) High speed switching

 Structure

NPN Silicon epitaxial planar transistor

 Applications

Driver

 Inner circuit

Package

TSMT3

Code

TL

Basic ordering unit (pieces)

3000

 Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Collector-base voltage

80

V

Collector-emitter voltage

80

V

Emitter-base voltage

6V

DC

0.7

A

Pulsed

1.4

A

0.5

W

1.0

W

Junction temperature

150

C

Range of storage temperature

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Mounted on a recommended land.

*3 Mounted on a 40 x 40 x 0.7[mm

Power dissipation

 Packaging specifications

Collector current

Parameter

Type

*1

*2

*3

TSMT3

(1)

(2)

(3)

Abbreviated symbol : ND

(1) Base

(2) Emittrer

(3) Collector

(1)

(3)

(2)

(1) Base

(2) Emittrer

(3) Collector

1/5

2010.06 - Rev.A