TPC8017-H datasheet(3/7 Pages) TOSHIBA

部件名	TPC8017-H

功能描述	High-Effciency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8017-H

2006-11-16

3

Electrical Characteristics (Ta

= 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

µA

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.1

⎯

2.3

V

VGS = 4.5 V, ID = 7.5 A

⎯

7.3

9.5

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 7.5 A

⎯

5.1

6.6

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 7.5 A

19

38

⎯

S

Input capacitance

Ciss

⎯

1465

⎯

Reverse transfer capacitance

Crss

⎯

175

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

610

⎯

pF

Rise time

tr

⎯

4

⎯

Turn-on time

ton

⎯

11

⎯

Fall time

tf

⎯

10

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 µs

⎯

38

⎯

ns

VDD ∼− 24 V, VGS = 10 V, ID = 15 A

⎯

25

⎯

Total gate charge

(gate-source plus gate-drain)

Qg

VDD ∼− 24 V, VGS = 5 V, ID = 15 A

⎯

14

⎯

Gate-source charge 1

Qgs1

⎯

4.7

⎯

Gate-drain (“miller”) charge

Qgd

⎯

5.7

⎯

Gate switch charge

QSW

VDD ∼− 24 V, VGS = 10 V, ID = 15 A

⎯

7.8

⎯

nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

60

A

Forward voltage (diode)

VDSF

IDR = 15 A, VGS = 0 V

⎯

−1.2

V

VDD ∼− 15 V

0 V

VGS

10 V

ID = 7.5 A

VOUT

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TPC8017-H 数据表(PDF) 3 Page - Toshiba Semiconductor

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TPC8017-H 数据表(PDF) 3 Page - Toshiba Semiconductor

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类似零件编号 - TPC8017-H

类似说明 - TPC8017-H

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