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TPCA8010-H 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 TPCA8010-H
功能描述  High-Speed Switching Applications
Download  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPCA8010-H 数据表(HTML) 1 Page - Toshiba Semiconductor

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TPCA8010-H
2009-12-21
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8010-H
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 3.7 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 0.38Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.9S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 200V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
5.5
Drain current
Pulsed (Note 1)
IDP
11
A
Drain power dissipation
(Tc=25℃)
PD
45
W
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
2.8
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.6
W
Single-pulse avalanche energy
(Note 3)
EAS
19
mJ
Avalanche current
IAR
5.5
A
Repetitive avalanche energy
(Tc=25℃) (Note 4)
EAR
1.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
5.0±0.2
S
0.05 S
A
1.27
0.4±0.1
0.595
0.05 M A
1
4
5
8
0.15±0.05
0.8±0.1
4.25±0.2
1
4
5
8
1, 2, 3 : SOURCE
4 : GATE
5, 6, 7, 8 : DRAIN
JEDEC
JEITA
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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