TPCA8008-H datasheet(3/7 Pages) TOSHIBA

部件名	TPCA8008-H

功能描述	High Speed Switching Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCA8008-H

2007-12-18

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cutoff current

IDSS

VDS = 250 V, VGS = 0 V

⎯

100

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

250

⎯

ID = 10 mA, VGS = −5 V

250

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

200

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 2 A

⎯

0.47

0.58

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2 A

1.5

3.3

⎯

S

Input capacitance

Ciss

⎯

600

⎯

Reverse transfer capacitance

Crss

⎯

20

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

220

⎯

pF

Rise time

tr

⎯

8

⎯

Turn-on time

ton

⎯

17

⎯

Fall time

tf

⎯

13

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

70

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

10

⎯

Gate-source charge

Qgs

⎯

7.6

⎯

Gate-drain (“Miller”) charge

Qgd

⎯

2.4

⎯

Gate switch charge

Qsw

VDD ∼− 200 V, VGS = 10 V,

ID = 4 A

⎯

3.7

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

8

A

Forward voltage (diode)

VDSF

IDR = 4 A, VGS = 0 V

⎯

−2.0

V

VDD ∼− 125 V

0 V

VGS

10 V

ID = 2 A

VOUT

类似零件编号 - TPCA8008-H

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TPCA8008-H	1Mb / 73P	Bipolar Small-Signal Transistors

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