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TPCP8302 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8302 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCP8302 2008-12-21 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅳ) TPCP8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.4 to −1.0 V (VDS = −6 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID −5 Drain current Pulse (Note 1) IDP −20 A Single-device operation (Note 3a) PD (1) 1.48 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 1.23 Single-device operation (Note 3a) PD (1) 0.58 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.36 W Single-pulse avalanche energy (Note 4) EAS 6.5 mJ Avalanche current IAR −5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.12 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration Marking (Note 6) Unit: mm 1. Source1 5. Drain2 2. Gate1 6. Drain2 3. Source2 7. Drain1 4. Gate2 8. Drain1 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3V1G Weight: 0.017 g (typ.) 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12+0.13 -0.12 0.28+0.1 -0.11 8302 1 2 3 4 8 7 6 5 * Lot No. 1 2 3 4 8 7 6 5 |
类似零件编号 - TPCP8302 |
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类似说明 - TPCP8302 |
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