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TPCF8402_0912 数据表(PDF) 10 Page - Toshiba Semiconductor |
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TPCF8402_0912 数据表(HTML) 10 Page - Toshiba Semiconductor |
10 / 11 page TPCF8402 2009-12-10 10 N-channel rth – tw Pulse width tw (s) 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) (4) (3) (2) (1) Single Pulse Drain-source voltage VDS (V) Safe operating area 10 0.1 100 10 1 100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (Pulsed) * 10 ms * 1 ms * VDSS max 1 0.1 |
类似零件编号 - TPCF8402_0912 |
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类似说明 - TPCF8402_0912 |
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