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TPCS8102 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TPCS8102
功能描述  Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Download  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPCS8102 数据表(HTML) 3 Page - Toshiba Semiconductor

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TPCS8102
2006-11-16
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0 V
−10
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−20
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 12 V
−8
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −200 μA
−0.5
−1.2
V
RDS (ON)
VGS = −2.0 V, ID = −3 A
30
60
RDS (ON)
VGS = −2.5 V, ID = −3 A
23
38
Drain-source ON resistance
RDS (ON)
VGS = −4 V, ID = −3 A
16
20
mΩ
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −3 A
8.5
17
S
Input capacitance
Ciss
2740
pF
Reverse transfer capacitance
Crss
780
pF
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
1030
pF
Rise time
tr
7.6
Turn-on time
ton
16
Fall time
tf
110
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
230
ns
Total gate charge
(gate-source plus gate-drain)
Qg
37
nC
Gate-source charge
Qgs
27
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ −16 V, VGS = −5 V, ID = −6 A
10
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain reverse
current
Pulse (Note 1)
IDRP
−24
A
Forward voltage (diode)
VDSF
IDR = −6 A, VGS = 0 V
1.2
V
VDD ∼− −10 V
0 V
VGS
−5V
ID = −3 A
VOUT


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