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TPC8207 数据表(PDF) 5 Page - Toshiba Semiconductor

部件名 TPC8207
功能描述  Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Download  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPC8207 数据表(HTML) 5 Page - Toshiba Semiconductor

  TPC8207 Datasheet HTML 1Page - Toshiba Semiconductor TPC8207 Datasheet HTML 2Page - Toshiba Semiconductor TPC8207 Datasheet HTML 3Page - Toshiba Semiconductor TPC8207 Datasheet HTML 4Page - Toshiba Semiconductor TPC8207 Datasheet HTML 5Page - Toshiba Semiconductor TPC8207 Datasheet HTML 6Page - Toshiba Semiconductor TPC8207 Datasheet HTML 7Page - Toshiba Semiconductor  
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TPC8207
2007-01-16
5
RDS (ON) – Ta
IDR – VDS
Capacitance – VDS
Vth – Ta
PD – Ta
Dynamic input/output characteristics
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
0
−80
−40
0
40
80
120
160
10
20
30
40
50
Common source
Pulse test
VGS = 2 V
VGS = 4 V
VGS = 2.5 V
ID = 6 A
1.5A, 3A
ID = 1.5 A, 3A, 6A
ID = 1.5A, 3 A, 6A
0.1
−0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
1
10
100
VGS = 0 V
Common source
Ta
= 25°C
Pulse test
1
3
5, 10
10
0.1
1
10
100
100
1000
10000
Ciss
Coss
Crss
Common source
Ta
= 25°C
VGS = 0 V
f
= 1 MHz
(1)
(2)
0
0
50
100
150
200
0.5
1.0
1.5
2.0
(4)
(3)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s
0
−80
0.4
1.0
1.4
−40
0
40
80
120
160
0.2
0.6
0.8
1.2
Common source
VDS = 10 V
ID = 200 µA
Pulse test
0
8
0
2
4
6
8
0
8
16
24
32
4
12
16
Common source
ID = 6 A
Ta
= 25°C
Pulse test
VDD = 16 V
VDS
VGS
8 V
4 V


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