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TPC8207 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TPC8207
功能描述  Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Download  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPC8207 数据表(HTML) 3 Page - Toshiba Semiconductor

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TPC8207
2007-01-16
3
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
±10
µA
Drain cut-OFF current
IDSS
VDS = 20 V, VGS = 0 V
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
20
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −12 V
8
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 200 µA
0.5
1.2
V
VGS = 2.0 V, ID = 4.2 A
22
45
VGS = 2.5 V, ID = 4.2 A
19
30
Drain-source ON resistance
RDS (ON)
VGS = 4.0 V, ID = 4.8 A
16
20
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3.0 A
5.5
11
S
Input capacitance
Ciss
2010
Reverse transfer capacitance
Crss
210
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
240
pF
Rise time
tr
6
Turn-ON time
ton
14
Fall time
tf
22
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 µs
94
ns
Total gate charge
(gate-source plus gate-drain)
Qg
22
Gate-source charge 1
Qgs1
3.2
Gate-drain (“miller”) charge
Qgd
VDD ∼− 16 V, VGS = 5 V, ID = 6 A
4.7
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
IDRP
24
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
−1.2
V
VDD ∼− 10 V
0 V
VGS
5 V
ID = 3 A
VOUT


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