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2SK2968 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 2SK2968
功能描述  DC−DC Converter, Relay Drive and Motor Drive Applications
Download  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SK2968 数据表(HTML) 2 Page - Toshiba Semiconductor

  2SK2968_02 Datasheet HTML 1Page - Toshiba Semiconductor 2SK2968_02 Datasheet HTML 2Page - Toshiba Semiconductor 2SK2968_02 Datasheet HTML 3Page - Toshiba Semiconductor 2SK2968_02 Datasheet HTML 4Page - Toshiba Semiconductor 2SK2968_02 Datasheet HTML 5Page - Toshiba Semiconductor 2SK2968_02 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SK2968
2002-07-31
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
µA
Gate−source breakdown voltage
V (BR) GSS
IG = ±10 µA, VDS = 0 V
±30
V
Drain cut−off current
IDSS
VDS = 720 V, VGS = 0 V
100
µA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 4 A
1.05
1.25
Forward transfer admittance
|Yfs|
VDS = 15 V, ID = 4 A
3.5
7.6
S
Input capacitance
Ciss
2150
Reverse transfer capacitance
Crss
35
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
220
pF

Rise time
tr
25
Turn−on time
ton
60
Fall time
tf
25
Switching time
Turn−off time
toff
120
ns

Total gate charge (gate−source
plus gate−drain)
Qg
70
Gate−source charge
Qgs
37
Gate−drain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 10 A
33
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
30
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
−1.9
V
Reverse recovery time
trr
1300
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / µs
14.5
µC
Marking


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