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TPCA8024 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8024 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8024 2010-01-05 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 17 A ⎯ 5.4 7.8 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 17 A ⎯ 3.5 4.3 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 17 A 36 72 ⎯ S Input capacitance Ciss ⎯ 1800 ⎯ Reverse transfer capacitance Crss ⎯ 370 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 570 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-on time ton ⎯ 19 ⎯ Fall time tf ⎯ 22 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 64 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 45 ⎯ Gate-source charge 1 Qgs1 ⎯ 8 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 35 A ⎯ 15 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 105 A Forward voltage (diode) VDSF IDR = 35 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 17 A VOUT |
类似零件编号 - TPCA8024 |
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类似说明 - TPCA8024 |
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