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TPCA8024 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TPCA8024
功能描述  Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Download  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPCA8024 数据表(HTML) 3 Page - Toshiba Semiconductor

  TPCA8024 Datasheet HTML 1Page - Toshiba Semiconductor TPCA8024 Datasheet HTML 2Page - Toshiba Semiconductor TPCA8024 Datasheet HTML 3Page - Toshiba Semiconductor TPCA8024 Datasheet HTML 4Page - Toshiba Semiconductor TPCA8024 Datasheet HTML 5Page - Toshiba Semiconductor TPCA8024 Datasheet HTML 6Page - Toshiba Semiconductor TPCA8024 Datasheet HTML 7Page - Toshiba Semiconductor  
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TPCA8024
2010-01-05
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
10
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
2.5
V
VGS = 4.5 V, ID = 17 A
5.4
7.8
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 17 A
3.5
4.3
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 17 A
36
72
S
Input capacitance
Ciss
1800
Reverse transfer capacitance
Crss
370
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
570
pF
Rise time
tr
11
Turn-on time
ton
19
Fall time
tf
22
Switching time
Turn-off time
toff
Duty
1%, tw = 10 μs
64
ns
Total gate charge
(gate-source plus gate-drain)
Qg
45
Gate-source charge 1
Qgs1
8
Gate-drain (“miller”) charge
Qgd
VDD 24 V, VGS = 10 V,
ID = 35 A
15
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
105
A
Forward voltage (diode)
VDSF
IDR = 35 A, VGS = 0 V
1.2
V
VDD 15 V
0 V
VGS
10 V
ID = 17 A
VOUT


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