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PEMH4 数据表(PDF) 4 Page - NXP Semiconductors |
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PEMH4 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2004 Apr 14 4 NXP Semiconductors Product data sheet NPN/NPN resistor-equipped transistors; R1 = 10 k Ω, R2 = open PEMH4; PUMH4 THERMAL CHARACTERISTICS Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 note 1 416 K/W SOT666 notes 1 and 2 416 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 μA VCE = 30 V; IB = 0; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 200 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV R1 input resistor 7 10 13 k Ω Cc collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − − 2.5 pF |
类似零件编号 - PEMH4 |
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类似说明 - PEMH4 |
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