STPSC806_09 datasheet(2/7 Pages) STMICROELECTRONICS

部件名	STPSC806

功能描述	600 V power Schottky silicon carbide diode

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Characteristics

STPSC806

2/7

Doc ID 16286 Rev 1

1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.2 x IF(AV) + 0.113 x IF

2

(RMS)

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS) Forward rms current

18

A

IF(AV)

Average forward current

Tc = 115 °C, δ = 0.5

8

A

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

30

24

120

A

IFRM

Repetitive peak forward current TC = 115 °C, Tj = 150 °C, δ = 0.1,

30

A

Tstg

Storage temperature range

-55 to +175

°C

Tj

Operating junction temperature

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Maximum value

Unit

Rth(j-c)

Junction to case

2.4

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR

(1)

1.

tp = 10 ms, δ < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

-20

100

µA

Tj = 150 °C

-

150

1000

VF

(2)

2.

tp = 500 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 8 A

-1.4

1.7

V

Tj = 150 °C

-

1.6

2.1

Table 5.

Other parameters

Symbol

Parameter

Test conditions

Typ.

Unit

Qc

Total capacitive charge

Vr = 400 V, IF = 8 A dIF/dt = -200 A/µs

Tj = 150 °C

10

nC

C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

450

pF

Vr = 400 V, Tc = 25 °C, F = 1 Mhz

35

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