PSMN5R0-30YL datasheet(5/14 Pages) NXP | N-channel TrenchMOS logic level FET

部件名	PSMN5R0-30YL

功能描述	N-channel TrenchMOS logic level FET

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制造商	NXP [NXP Semiconductors]

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PSMN5R0-30YL_3

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Product data sheet

Rev. 03 — 4 January 2010

5 of 14

NXP Semiconductors

PSMN5R0-30YL

N-channel TrenchMOS logic level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =20A; VGS =0V; Tj <25°C; tav= 100 ns

35

-

V

ID =250 µA; VGS =0V; Tj =25°C

30

-

V

ID =250 µA; VGS =0V; Tj =-55 °C

27

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS= VGS; Tj = 25 °C; see Figure 11

and 12

1.3

1.7

2.15

V

ID =1mA; VDS= VGS; Tj = 150 °C; see Figure 12

0.65

-

V

ID =1mA; VDS= VGS; Tj = -55 °C; see Figure 12

--2.45

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 25 °C

--1

µA

VDS =30V; VGS =0V; Tj = 150 °C

-

100

µA

IGSS

gate leakage current

VGS =16V; VDS =0V; Tj = 25 °C

-

100

nA

VGS =-16 V; VDS =0V; Tj = 25 °C

-

100

nA

RDSon

drain-source on-state

resistance

VGS =4.5 V; ID =15A; Tj = 25 °C

-

5.08

6.7

m

Ω

VGS =10V; ID =15A; Tj = 150 °C;

see Figure 13

--8.7

m

Ω

VGS =10V; ID =15A; Tj = 25 °C

-

3.63

5

m

Ω

RG

gate resistance

f = 1 MHz

-

0.69

1.5

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =10A; VDS =12V; VGS =4.5 V;

see Figure 14

-

14.1

-

nC

ID =10A; VDS =12V; VGS =10V;

see Figure 14 and 15

-29

-

nC

ID =0A; VDS =0V; VGS =10V

-

27

-

nC

QGS

gate-source charge

ID =10A; VDS =12V; VGS =4.5 V;

see Figure 14 and 15

-4.3

-

nC

QGS(th)

pre-threshold

gate-source charge

-2.9

-

nC

QGS(th-pl)

post-threshold

gate-source charge

-1.4

-

nC

QGD

gate-drain charge

-

3.8

-

nC

VGS(pl)

gate-source plateau

voltage

VDS =12V; see Figure 14 and 15

-2.5

-

V

Ciss

input capacitance

VDS =12V; VGS = 0 V; f = 1 MHz; Tj =25°C;

see Figure 16

-

1760

-

pF

Coss

output capacitance

-

373

-

pF

Crss

reverse transfer

capacitance

-

171

-

pF

td(on)

turn-on delay time

VDS =12V; RL =0.5 Ω; VGS =4.5 V;

RG(ext) =4.7 Ω

-19

-

ns

tr

rise time

-

35

-

ns

td(off)

turn-off delay time

-

29

-

ns

tf

fall time

-

12

-

ns

类似零件编号 - PSMN5R0-30YL

制造商	部件名	数据表	功能描述
NXP Semiconductors	PSMN5R0-30YL	184Kb / 13P	N-channel TrenchMOS logic level FET Rev. 01-10 September 2008

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类似说明 - PSMN5R0-30YL

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PSMN5R0-30YL 数据表(PDF) 5 Page - NXP Semiconductors

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