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PSMN5R0-30YL 数据表(PDF) 5 Page - NXP Semiconductors

部件名 PSMN5R0-30YL
功能描述  N-channel TrenchMOS logic level FET
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PSMN5R0-30YL 数据表(HTML) 5 Page - NXP Semiconductors

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PSMN5R0-30YL_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 4 January 2010
5 of 14
NXP Semiconductors
PSMN5R0-30YL
N-channel TrenchMOS logic level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =20A; VGS =0V; Tj <25°C; tav= 100 ns
35
-
-
V
ID =250 µA; VGS =0V; Tj =25°C
30
-
-
V
ID =250 µA; VGS =0V; Tj =-55 °C
27
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS= VGS; Tj = 25 °C; see Figure 11
and 12
1.3
1.7
2.15
V
ID =1mA; VDS= VGS; Tj = 150 °C; see Figure 12
0.65
-
-
V
ID =1mA; VDS= VGS; Tj = -55 °C; see Figure 12
--2.45
V
IDSS
drain leakage current
VDS =30V; VGS =0V; Tj = 25 °C
--1
µA
VDS =30V; VGS =0V; Tj = 150 °C
-
-
100
µA
IGSS
gate leakage current
VGS =16V; VDS =0V; Tj = 25 °C
-
-
100
nA
VGS =-16 V; VDS =0V; Tj = 25 °C
-
-
100
nA
RDSon
drain-source on-state
resistance
VGS =4.5 V; ID =15A; Tj = 25 °C
-
5.08
6.7
m
VGS =10V; ID =15A; Tj = 150 °C;
see Figure 13
--8.7
m
VGS =10V; ID =15A; Tj = 25 °C
-
3.63
5
m
RG
gate resistance
f = 1 MHz
-
0.69
1.5
Dynamic characteristics
QG(tot)
total gate charge
ID =10A; VDS =12V; VGS =4.5 V;
see Figure 14
-
14.1
-
nC
ID =10A; VDS =12V; VGS =10V;
see Figure 14 and 15
-29
-
nC
ID =0A; VDS =0V; VGS =10V
-
27
-
nC
QGS
gate-source charge
ID =10A; VDS =12V; VGS =4.5 V;
see Figure 14 and 15
-4.3
-
nC
QGS(th)
pre-threshold
gate-source charge
-2.9
-
nC
QGS(th-pl)
post-threshold
gate-source charge
-1.4
-
nC
QGD
gate-drain charge
-
3.8
-
nC
VGS(pl)
gate-source plateau
voltage
VDS =12V; see Figure 14 and 15
-2.5
-
V
Ciss
input capacitance
VDS =12V; VGS = 0 V; f = 1 MHz; Tj =25°C;
see Figure 16
-
1760
-
pF
Coss
output capacitance
-
373
-
pF
Crss
reverse transfer
capacitance
-
171
-
pF
td(on)
turn-on delay time
VDS =12V; RL =0.5 Ω; VGS =4.5 V;
RG(ext) =4.7 Ω
-19
-
ns
tr
rise time
-
35
-
ns
td(off)
turn-off delay time
-
29
-
ns
tf
fall time
-
12
-
ns


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