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BF1208D 数据表(PDF) 8 Page - NXP Semiconductors |
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BF1208D 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 22 page BF1208D_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 16 May 2007 8 of 22 NXP Semiconductors BF1208D Dual N-channel dual gate MOSFET VDS(A) =VDS(B) =Vsup; VG2-S =4V; Tj =25 °C; RG1 =86kΩ (connected to ground); see Figure 3. (1) VDS(B) =5V. (2) VDS(B) = 4.5 V. (3) VDS(B) =4V. (4) VDS(B) = 3.5 V. (5) VDS(B) =3V. (6) VDS(B) = 2.5 V. VDS(A) =5V; VG1-S(B) = 0 V; gate1 (AMP A) is open; Tj =25 °C. Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values VDS(A) =VDS(B) =5V; VG1-S(B) =0V; fw = 50 MHz; funw = 60 MHz; Tamb =25 °C; see Figure 33. VDS(A) =VDS(B) =5V; VG1-S(B) = 0 V; f = 50 MHz; see Figure 33. Fig 10. Amplifier A: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values Fig 11. Amplifier A: gain reduction as a function of AGC voltage; typical values Vsup (V) 05 4 23 1 001aaa558 8 12 4 16 20 ID (mA) 0 001aaa559 VG2-S (V) 06 4 2 16 8 24 32 ID (mA) 0 (1) (2) (3) (4) (5) (6) gain reduction (dB) 050 40 20 30 10 001aac195 100 90 110 120 Vunw (dB µV) 80 VAGC (V) 04 3 12 001aac196 30 20 40 10 0 gain reduction (dB) 50 |
类似零件编号 - BF1208D |
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类似说明 - BF1208D |
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