数据搜索系统,热门电子元器件搜索 |
|
BF1208D 数据表(PDF) 7 Page - NXP Semiconductors |
|
BF1208D 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 22 page BF1208D_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 16 May 2007 7 of 22 NXP Semiconductors BF1208D Dual N-channel dual gate MOSFET (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. VDS(A) =5V; VG1-S(B) =VDS(B) =0V; Tj =25 °C. VDS(A) =5V; VG2-S =4V; VDS(B) =5V; VG1-S(B) =0V; Tj =25 °C. ID(B) = internal gate1 current = current in pin drain (AMP B) if MOSFET (B) is switched off. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. Amplifier A: drain current as a function of internal gate1 current; typical values ID (mA) 032 24 816 001aaa556 20 10 30 40 yfs (mS) 0 (1) (2) (3) (4) (5) (6) 001aac206 ID(B) (µA) 060 40 20 8 12 4 16 20 ID(A) (mA) 0 |
类似零件编号 - BF1208D |
|
类似说明 - BF1208D |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |