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BF904AR 数据表(PDF) 3 Page - NXP Semiconductors |
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BF904AR 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 15 page NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature of the soldering point of the source lead. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 110 °C; note 1; see Fig.4 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 250 0 200 MGL615 150 150 100 50 Ptot (mW) Ts (°C) Rev. 04 - 13 November 2007 3 of 15 |
类似零件编号 - BF904AR |
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类似说明 - BF904AR |
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