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BF823 数据表(PDF) 3 Page - NXP Semiconductors |
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BF823 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 2004 Jan 16 3 NXP Semiconductors Product data sheet PNP high-voltage transistors BF821; BF823 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF821 − −300 V BF823 − −250 V VCEO collector-emitter voltage open base BF821 − −300 V BF823 − −250 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −50 mA ICM peak collector current − −100 mA IBM peak base current − −50 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0; VCB = −200 V − −10 nA IE = 0; VCB = −200 V; Tj = 150 °C − −10 µA IEBO emitter-base cut-off current IC = 0; VEB = −5 V − −50 nA hFE DC current gain IC = −25 mA; VCE = −20 V 50 − VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5 mA − −800 mV Cre feedback capacitance IC = Ic = 0; VCB = −30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz |
类似零件编号 - BF823 |
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类似说明 - BF823 |
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