BCW89 datasheet(3/6 Pages) NXP

部件名	BCW89

功能描述	PNP general purpose transistor

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 6 page

1999 Apr 15

3

NXP Semiconductors

Product data sheet

PNP general purpose transistor

BCW89

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −20 V

−

−100 nA

IE = 0; VCB = −20 V; Tj = 100 °C

−

−10

μA

IEBO

emitter cut-off current

IC = 0; VEB = −5 V

−

−100 nA

hFE

DC current gain

IC = −10 μA; VCE = −5 V

−

90

−

IC = −2 mA; VCE = −5 V

120

−

260

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−

−80

−300 mV

IC = −50 mA; IB = −2.5 mA

−

−150 −

mV

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−

−720 −

mV

IC = −50 mA; IB = −2.5 mA

−

−810 −

mV

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−600 −

−750 mV

Cc

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

pF

fT

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz −

150

−

MHz

F

noise figure

IC = −200 μA; VCE = −5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

−

10

dB

类似零件编号 - BCW89

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