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BCP53 数据表(PDF) 9 Page - NXP Semiconductors |
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BCP53 数据表(HTML) 9 Page - NXP Semiconductors |
9 / 15 page BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 22 February 2008 9 of 15 NXP Semiconductors BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ = 0.02. FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aaa818 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 duty cycle = 0.01 0 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0 Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −30 V; IE =0A - - −100 nA VCB = −30 V; IE =0A; Tj = 150 °C -- −10 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain VCE = −2V IC = −5mA 63 - - IC = −150 mA 63 - 250 IC = −500 mA [1] 40 - - DC current gain VCE = −2V hFE selection -10 IC = −150 mA 63 - 160 hFE selection -16 IC = −150 mA 100 - 250 VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] -- −0.5 V VBE base-emitter voltage VCE = −2 V; IC = −500 mA [1] -- −1V Cc collector capacitance VCB = −15 V; IE =ie =0A; f=1MHz -15 - pF fT transition frequency VCE = −5 V; IC = −50 mA; f = 100 MHz - 145 - MHz |
类似零件编号 - BCP53 |
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类似说明 - BCP53 |
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