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BC618 数据表(PDF) 4 Page - NXP Semiconductors |
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BC618 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page  2004 Nov 05 4 NXP Semiconductors Product data sheet NPN Darlington transistor BC618 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 60 V; IE = 0 A − − 50 nA ICES collector-emitter cut-off current VBE = 0 V; VCE = 60 V − − 50 μA IEBO emitter-base cut-off current VEB = 10 V; IC = 0 A − − 50 nA hFE DC current gain VCE = 5 V; see Fig.2 IC = 1 mA 2000 − − IC = 10 mA 4000 − − IC = 200 mA 10000 − 70000 VCEsat collector-emitter saturation voltage IC = 200 mA; IB = 0.2 mA − − 1.1 V VBEsat base-emitter saturation voltage IC = 200 mA; IB = 0.2 mA − − 1.6 V Cc collector capacitance VCB = 30 V; IE = 0 A − 3.5 − pF fT transition frequency VCE = 5 V; IC = 500 mA; f = 100 MHz 155 − − MHz handbook, full pagewidth 0 60000 80000 20000 40000 MGD837 10−1 1 IC (mA) hFE 10 102 103 Fig.2 DC current gain; typical values. VCE = 2 V. |
类似零件编号 - BC618 |
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类似说明 - BC618 |
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