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ZDT717 Datasheet(数据表) 2 Page - Zetex Semiconductors

部件型号  ZDT717
说明  DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS
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制造商  ZETEX [Zetex Semiconductors]
网页  http://www.diodes.com/
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ZDT717 Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL – T717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-12
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-10
A
Continuous Collector Current
IC
-2.5
A
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
Ptot
2
2.5
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
16
20
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
62.5
50
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT717
SM-8
(8 LEAD SOT223)
C1
C1
C2
C2
B1
E1
B2
E2
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-12
-35
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-12
-25
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-8.5
V
IE=-100µA
Collector Cutoff
Current
ICBO
-100
nA
VCB=-10V
Emitter Cutoff
Current
IEBO
-100
nA
VEB=-4V
Collector Emitter
Cutoff Current
ICES
-100
nA
VCES=-10V
Collector-Emitter
Saturation Voltage
VCE(sat)
-10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-10mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
-1.0
V
IC=-2.5A, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
-1.0
V
IC=-2.5A, VCE=-2V*
Static Forward
Current Transfer
Ratio
hFE
300
300
180
60
45
475
450
275
100
70
IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-2.5A, VCE=-2V*
IC=-8A, VCE=-2V*
IC=-10A, VCE=-2V*
Transition
Frequency
fT
80
110
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
21
30
pF
VCB=-10V, f=1MHz
Turn-On Time
ton
70
ns
VCC=-6V, IC=-2A
IB1=IB2=50mA
Turn-Off Time
toff
130
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZDT717
3 - 348
3 - 349




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